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2SA1943N(S1,E,S) TOSHIBA Discrete Semiconductor Products

2SA1943N(S1,E,S) - TOSHIBA - main product image
Part No.:2SA1943N(S1,E,S)
Brand:TOSHIBA
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.79
100+ $ 0.63
1000+ $ 0.60

Technical Specifications

  • Part No.2SA1943N(S1,E,S)
  • Series -
  • Category Discrete Semiconductor Products
  • Packaging Tube
  • Part Status Active
  • Power - Max 150W
  • Mounting Type Through Hole
  • Transistor Type PNP
  • Operating Temperature 150°C (TJ)
  • Frequency - Transition 30MHz
  • Supplier Device Package TO-3P(N)
  • Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
  • Current - Collector (Ic) (Max) 15A
  • Current - Collector Cutoff (Max) 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V
  • Voltage - Collector Emitter Breakdown (Max) 230V
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