2STBN15D100 ST Bipolar (BJT)

The 2STBN15D100 is an NPN bipolar power transistor from STMicroelectronics, featuring 100V collector-emitter voltage and 15A continuous collector current for medium-power switching and linear applications. For selection, verify DC current gain (hFE) characteristics, collector-emitter saturation voltage for conduction losses, transition frequency for switching speed, power dissipation with proper heatsinking, and operating junction temperature range. Features include low VCE(sat) for high efficiency, high current capability, and surface-mount package for automated assembly. Ideal for power management in portable equipment, voltage regulation in bias supply circuits, switching regulators in battery charger applications, heavy load drivers, and low-voltage switching circuits. In stock at HL Electronics – request a quote for fast delivery.

2STBN15D100 - ST - main product image
Part No.:2STBN15D100
Brand:ST
Date Code:
Stock:16,530
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.49
100+ $ 0.39
1000+ $ 0.38
15000+ $ 0.37
30000+ $ 0.37

Technical Specifications

  • Part No.2STBN15D100
  • RoHS ROHS3 Compliant
  • Model 2STBN15D100
  • Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Power - Max 1.6 W
  • Manufacturer STMicroelectronics
  • Mounting Type Surface Mount
  • Transistor Type NPN
  • Standard Package 2500
  • Base Product Number 2STBN15D100
  • Operating Temperature 150°C (TJ)
  • Frequency - Transition 80 MHz
  • Supplier Device Package DPAK (TO-252-3)
  • Vce Saturation (Max) @ Ib, Ic 0.4V @ 200mA, 5A
  • Current - Collector (Ic) (Max) 15 A
  • Current - Collector Cutoff (Max) 100 nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 5A, 2V
  • Voltage - Collector Emitter Breakdown (Max) 100 V
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