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BDX53B ST Bipolar (BJT)
The BDX53B is an NPN silicon power Darlington transistor from STMicroelectronics in TO-220 through-hole package, featuring 80V collector-emitter voltage (VCEO), 8A continuous collector current, and monolithic Darlington configuration with integrated antiparallel collector-emitter diode . For selection, verify DC current gain (hFE) linearity, high fT frequency, collector-emitter saturation voltage, power dissipation with proper heatsinking, and operating junction temperature from -65°C to +150°C . Features include good hFE linearity, high frequency characteristics, monolithic Darlington configuration with integrated clamp diode for inductive load protection. Ideal for audio amplifier output stages, linear and switching industrial equipment, relay and solenoid drivers, stepper motor drivers, and any medium-power switching requiring high current gain from low-current logic outputs. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.39 |
| 50+ | $ 0.36 |
| 1000+ | $ 0.36 |
| 2500+ | $ 0.36 |
Technical Specifications
- Part No.BDX53B
- Model BDX53B
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer STMicroelectronics
- Packaging Tube
- Part Status Active
- Transistor Type NPN - Darlington
- Current - Collector (Ic) (Max) 8 A
- Voltage - Collector Emitter Breakdown (Max) 80 V
- Vce Saturation (Max) @ Ib, Ic 2 V @ 12 mA, 3 A
- Current - Collector Cutoff (Max) 200 µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3 A, 3 V
- Power - Max 65 W
- Operating Temperature -65°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Base Product Number BDX53
- RoHS ROHS3 Compliant
- Standard Package 1000