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BDX53C ST Bipolar (BJT)

The BDX53C is an NPN Darlington bipolar power transistor in TO-220 through-hole package, featuring 100V collector-emitter voltage, 8A continuous collector current, and very high DC current gain (hFE) due to Darlington configuration . For selection, verify collector-emitter saturation voltage, power dissipation of 60W with proper heatsinking, integrated base-emitter resistors for improved stability, and operating junction temperature from -65°C to +150°C . Features include Darlington pair on single chip for high gain, low saturation voltage, and complementary PNP type available. Ideal for relay and solenoid drivers, stepper motor drivers, high-current lamp and LED drivers, linear and switching power applications, audio amplifier output stages, and any load driving requiring high current gain from low-current logic outputs. In stock at HL Electronics – request a quote for fast delivery.

BDX53C - ST - main product image
Part No.:BDX53C
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.34
50+ $ 0.26
1000+ $ 0.24
20000+ $ 0.24
30000+ $ 0.24

Technical Specifications

  • Part No.BDX53C
  • RoHS ROHS3 Compliant
  • Model BDX53C
  • Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
  • Packaging Tube
  • Part Status Active
  • Power - Max 65 W
  • Manufacturer STMicroelectronics
  • Mounting Type Through Hole
  • Transistor Type NPN - Darlington
  • Standard Package 1000
  • Base Product Number BDX53
  • Operating Temperature 150°C (TJ)
  • Supplier Device Package TO-220-3
  • Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
  • Current - Collector (Ic) (Max) 8 A
  • Current - Collector Cutoff (Max) 200 µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
  • Voltage - Collector Emitter Breakdown (Max) 100 V
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