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CSD13385F5 TI Power MOSFET

The CSD13385F5 is a NexFET™ Power MOSFET from Texas Instruments in 3-pin LGA (F5) ultra-small package (1mm × 0.6mm), featuring 12V drain-source voltage and ultra-low on-resistance. For selection, verify RDS(on) of 9.3mΩ typical at VGS=4.5V, gate charge of 3.9nC, low Qgd/Qgs ratio for reduced switching losses, and operating temperature from -55°C to +150°C. Features include ultra-low gate charge for simplified drive requirements, high avalanche rating, and ultra-small footprint. Ideal for battery management and load switching in portable electronics, smartphones, tablets, wearables, and any low-voltage high-efficiency switching application requiring ultra-compact package. In stock at HL Electronics – request a quote for fast delivery.

CSD13385F5 - TI - main product image
Part No.:CSD13385F5
Brand:TI
Date Code:24+
Stock:26,552
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.19
100+ $ 0.15
750+ $ 0.12
1500+ $ 0.11
3000+ $ 0.10
18000+ $ 0.10
39000+ $ 0.10

Technical Specifications

  • Part No.CSD13385F5
  • Model CSD13385F5
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer Texas Instruments
  • Series NexFET™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 12 V
  • Current - Continuous Drain (Id) 5 A (Ta)
  • Rds On (Max) @ Id, Vgs 28 mΩ @ 1 A, 4.5 V
  • Vgs(th) (Max) @ Id 1.1 V @ 250 µA
  • Gate Charge (Qg) (Typ) @ Vgs 1.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Typ) @ Vds 290 pF @ 6 V
  • Power Dissipation (Max) 1.7 W (Ta)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 3-PICOSTAR
  • Base Product Number CSD13385F5
  • RoHS ROHS3 Compliant
  • Standard Package 3000
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