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CSD16327Q3 TI Power MOSFET
The CSD16327Q3 from TI is a 25V N-Channel NexFET™ power MOSFET engineered for ultra-low losses in high-density power conversion. For selection, it features an extremely low drain-source on-resistance of just 3.4mΩ at 8V gate drive . Optimized for 5V gate drive, its ultra-low total gate charge of 6.2nC and gate-to-drain charge of 1.1nC minimize switching losses . The 112A continuous drain current and low thermal resistance make it ideal for demanding designs. In application, it excels as a synchronous FET in point-of-load converters for networking, telecom, and computing systems . It is optimally suited for CPU/GPU core voltage regulation modules, high-density DC-DC buck converters, and power distribution where maximizing efficiency and power density in a compact 3.3mm x 3.3mm SON footprint is critical . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.44 |
| 100+ | $ 0.37 |
| 1250+ | $ 0.34 |
| 2500+ | $ 0.32 |
| 37500+ | $ 0.32 |
| 50000+ | $ 0.32 |
Technical Specifications
- Part No.CSD16327Q3
- Series NexFET™
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) +10V, -8V
- Technology MOSFET (Metal Oxide)
- Vds (Vdss) 25 V
- Part Status Active
- Manufacturer Texas Instruments
- Mounting Type Surface Mount
- Qg (Max) @ Vgs 8.4 nC @ 4.5 V
- Ciss (Max) @ Vds 1300 pF @ 12.5 V
- Id (Max) @ 25°C 112A (Tc)
- Vgs(th) (Max) @ Id 1.4V @ 250µA
- Base Product Number CSD16327
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 3W (Ta) [74W (Tc)]
- Rds(on) (Max) @ Id, Vgs 4mΩ @ 24A, 8V
- Supplier Device Package 8-VSON-CLIP (3.3x3.3)
- Id @ 25°C (Continuous Drain Current) 60A (Package Limited) [112A (Silicon Limited)]
- Drive Voltage (Max Rds On, Min Rds On) 3V, 8V