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CSD17304Q3 TI Power MOSFET
The CSD17304Q3 is a NexFET™ N-channel power MOSFET with 30-V drain-to-source voltage (VDS) and low on-resistance of 18.5 mΩ typical at 8 V VGS . It is housed in a 3.3-mm × 3.3-mm SON (Q3) package with optimized gate charge for high-frequency switching. The device features low thermal resistance and is Pb-free, halogen-free, and RoHS compliant . RDS(on) is specified at 25°C and 125°C for reliable operation. Selection is optimal for synchronous buck converter low-side or high-side switching requiring high efficiency. Applications include point-of-load converters for servers, DC-DC converters, and battery protection circuits requiring 30-V rating and low on-resistance in a compact surface-mount package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.52 |
| 100+ | $ 0.43 |
| 1250+ | $ 0.39 |
| 2500+ | $ 0.38 |
Technical Specifications
- Part No.CSD17304Q3
- Model CSD17304Q3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 35 A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 3 V, 8 V
- Rds On (Max) @ Id, Vgs 5.4 mOhm @ 17 A, 8 V
- Vgs(th) (Max) @ Id 1.8 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 15 V
- Power Dissipation (Max) 2.8 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON (3.3x3.3)
- Base Product Number CSD17304
- RoHS ROHS3 Compliant
- Standard Package 2500