> Goods Details Page
> CSD17308Q3
CSD17308Q3 TI Power MOSFET
The CSD17308Q3 is a 30-V N-channel NexFET™ power MOSFET housed in a 3.3-mm × 3.3-mm SON (Q3) package, designed for low-loss power conversion. It features an ultra-low on-resistance (RDS(on)) of 17.9 mΩ typical at VGS = 4.5 V, with a low gate charge (Qg) of 5.5 nC. The device supports a continuous drain current of up to 14 A and is Pb-free, halogen-free, and RoHS compliant. It is optimized for synchronous buck converters and power management applications. Applications include point-of-load (POL) converters for servers, DC-DC converters, and battery protection circuits. In stock at HL Electronics – request a quote for fast delivery.
Part No.:CSD17308Q3
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.46 |
| 100+ | $ 0.38 |
| 1250+ | $ 0.35 |
| 2500+ | $ 0.33 |
Technical Specifications
- Part No.CSD17308Q3
- Model CSD17308Q3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 35 A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 3 V, 8 V
- Rds On (Max) @ Id, Vgs 5.4 mOhm @ 17 A, 8 V
- Vgs(th) (Max) @ Id 1.8 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 15 V
- Power Dissipation (Max) 2.8 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON (3.3x3.3)
- Base Product Number CSD17308
- RoHS ROHS3 Compliant
- Standard Package 2500