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CSD17318Q2 TI Power MOSFET

The CSD17318Q2 is a NexFET™ power MOSFET from Texas Instruments in SON-2x2 (Q2) package, featuring 30V drain-source voltage and low on-resistance. For selection, verify drain-source voltage of 30V, RDS(on) of 31.5mΩ typical at VGS=8V, gate charge of 3.1nC, low Qgd/Qgs ratio for reduced switching losses, and operating temperature from -55°C to +150°C. Features include ultra-low gate charge, high avalanche rating, and compact 2mm x 2mm SON package. Ideal for load switching and power path management in portable electronics, DC-DC converters, battery protection circuits, and any low-voltage switching application. In stock at HL Electronics – request a quote for fast delivery.

CSD17318Q2 - TI - main product image
Part No.:CSD17318Q2
Brand:TI
Date Code:23+
Stock:39,140
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.21
100+ $ 0.16
750+ $ 0.14
1500+ $ 0.12
3000+ $ 0.12
18000+ $ 0.12
39000+ $ 0.11

Technical Specifications

  • Part No.CSD17318Q2
  • Model CSD17318Q2
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer Texas Instruments
  • Series NexFET™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30 V
  • Current - Continuous Drain (Id) 20 A (Ta)
  • Rds On (Typ) @ Id, Vgs 9 mΩ @ 8 A, 8 V
  • Vgs(th) (Max) @ Id 1.8 V @ 250 µA
  • Gate Charge (Qg) (Typ) @ Vgs 9.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Typ) @ Vds 1600 pF @ 15 V
  • Power Dissipation (Max) 2.5 W (Ta)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 6-WSON (2x2)
  • Base Product Number CSD17318Q2
  • RoHS ROHS3 Compliant
  • Standard Package 3000
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