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CSD17551Q3A TI Power MOSFET

The CSD17551Q3A is a NexFET™ N-channel power MOSFET with 30-V drain-to-source voltage (VDS) and ultra-low on-resistance of 6.9 mΩ typical at 10 V VGS . It is housed in a 3.3-mm × 3.3-mm SON (Q3A) package with optimized gate charge for high-frequency switching. The device features low thermal resistance and is Pb-free, halogen-free, and RoHS compliant . RDS(on) is specified at 25°C and 125°C for reliable operation. Selection is optimal for synchronous buck converter low-side or high-side switching requiring high efficiency. Applications include point-of-load converters for servers, DC-DC converters, and battery protection circuits requiring 30-V rating and low on-resistance. In stock at HL Electronics – request a quote for fast delivery.

CSD17551Q3A - TI - main product image
Part No.:CSD17551Q3A
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.45
100+ $ 0.35
1250+ $ 0.30
2500+ $ 0.29
37500+ $ 0.29
50000+ $ 0.28

Technical Specifications

  • Part No.CSD17551Q3A
  • Model CSD17551Q3A
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Manufacturer Texas Instruments
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30 V
  • Current - Continuous Drain (Id) @ 25°C 37 A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
  • Rds On (Max) @ Id, Vgs 6.3 mOhm @ 15 A, 10 V
  • Vgs(th) (Max) @ Id 1.9 V @ 250 µA
  • Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 2420 pF @ 15 V
  • Power Dissipation (Max) 2.9 W (Ta), 65 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-VSON (3.3x3.3)
  • Base Product Number CSD17551
  • RoHS ROHS3 Compliant
  • Standard Package 2500
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