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CSD17573Q5B TI Power MOSFET
The CSD17573Q5B is a NexFET™ N-channel power MOSFET with 30 V drain-to-source voltage (VDS) and ultra-low on-resistance of 2.0 mΩ typical at 10 V VGS. It is housed in a 5 mm × 6 mm SON (Q5B) package with optimized gate charge for high-frequency switching. The device features low thermal resistance for efficient heat dissipation and is Pb-free, halogen-free, and RoHS compliant. RDS(on) is specified at both 25°C and 125°C for safe operating area. Selection is optimal for synchronous buck converter low-side or high-side switching requiring ultra-low conduction losses. Applications include point-of-load converters for servers, DC-DC converters, battery protection circuits for power tools, and high-current load switching requiring 30 V rating and ultra-low on-resistance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.43 |
| 100+ | $ 0.36 |
| 1250+ | $ 0.33 |
| 2500+ | $ 0.31 |
Technical Specifications
- Part No.CSD17573Q5B
- Model CSD17573Q5B
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 100 A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
- Rds On (Max) @ Id, Vgs 0.65 mOhm @ 25 A, 10 V
- Vgs(th) (Max) @ Id 1.8 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7430 pF @ 15 V
- Power Dissipation (Max) 3.2 W (Ta), 119 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON-CLIP (5x6)
- Base Product Number CSD17573
- RoHS ROHS3 Compliant
- Standard Package 2500