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CSD17577Q3A TI Power MOSFET
The CSD17577Q3A is a NexFET™ N-channel power MOSFET designed for high-efficiency step-down converters. It operates with a 30V drain-to-source voltage (VDS) and features ultra-low on-resistance (RDS(on) of 6.5 mΩ typical at 10V VGS). The device is housed in a 3.3mm × 3.3mm SON package with optimized gate charge for high-frequency switching. Selection is optimal for synchronous buck converter low-side or high-side switching. Applications include point-of-load (POL) converters for servers, networking equipment, and graphics cards, as well as battery protection circuits where low conduction losses are critical. In stock at HL Electronics – request a quote for fast delivery.
Part No.:CSD17577Q3A
Brand:TI
Date Code:26+
Stock:55,691
SPQ:0
MOQ:1+
Delivery Time:In Stock
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.27 |
| 100+ | $ 0.21 |
| 1250+ | $ 0.18 |
| 2500+ | $ 0.17 |
Technical Specifications
- Part No.CSD17577Q3A
- Model CSD17577Q3A
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 40 A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
- Rds On (Max) @ Id, Vgs 2.1 mOhm @ 20 A, 10 V
- Vgs(th) (Max) @ Id 1.8 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3450 pF @ 15 V
- Power Dissipation (Max) 2.8 W (Ta), 78 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON-CLIP (3.3x3.3)
- Base Product Number CSD17577
- RoHS ROHS3 Compliant
- Standard Package 2500