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CSD17578Q3A TI Power MOSFET
The CSD17578Q3A is a NexFET™ power MOSFET from Texas Instruments in SON-3.3x3.3 (Q3) package, featuring 30V drain-source voltage and ultra-low on-resistance. For selection, verify drain-source voltage of 30V, RDS(on) of 3.1mΩ typical at VGS=10V, gate charge of 14.1nC, low Qgd/Qgs ratio, and operating temperature from -55°C to +150°C. Features include ultra-low gate charge, high avalanche rating, and compact 3.3mm x 3.3mm SON package. Ideal for load switching, battery management, DC-DC converters, power distribution, and any low-voltage high-current switching application. In stock at HL Electronics – request a quote for fast delivery.
Part No.:CSD17578Q3A
Brand:TI
Date Code:26+
Stock:44,150
SPQ:0
MOQ:1+
Delivery Time:In Stock
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.24 |
| 100+ | $ 0.19 |
| 1250+ | $ 0.16 |
| 2500+ | $ 0.15 |
Technical Specifications
- Part No.CSD17578Q3A
- Model CSD17578Q3A
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Texas Instruments
- Series NexFET™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) 30 A (Ta)
- Rds On (Typ) @ Id, Vgs 4.2 mΩ @ 8 A, 10 V
- Vgs(th) (Max) @ Id 1.9 V @ 250 µA
- Gate Charge (Qg) (Typ) @ Vgs 11.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Typ) @ Vds 2330 pF @ 15 V
- Power Dissipation (Max) 2.8 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON (3.3x3.3)
- Base Product Number CSD17578Q3A
- RoHS ROHS3 Compliant
- Standard Package 3000