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CSD17579Q3A TI Power MOSFET
The CSD17579Q3A is a 30-V N-channel NexFET™ power MOSFET housed in a 3.3-mm × 3.3-mm SON (Q3A) package, designed for low-loss power conversion. It features an ultra-low on-resistance (RDS(on)) of 7.5 mΩ typical at VGS = 10 V, with a low gate charge (Qg) of 11 nC. The device supports continuous drain current up to 18 A (Tc = 25°C) and has an avalanche rating of 26 mJ. It is optimized for synchronous buck converters and power management. Applications include point-of-load (POL) converters for servers, DC-DC converters, and battery protection circuits. In stock at HL Electronics – request a quote for fast delivery.
Part No.:CSD17579Q3A
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.17 |
| 1250+ | $ 0.14 |
| 2500+ | $ 0.14 |
Technical Specifications
- Part No.CSD17579Q3A
- Model CSD17579Q3A
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 20 A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
- Rds On (Max) @ Id, Vgs 10.8 mOhm @ 10 A, 10 V
- Vgs(th) (Max) @ Id 1.8 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 2970 pF @ 15 V
- Power Dissipation (Max) 2.6 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON (3.3x3.3)
- Base Product Number CSD17579
- RoHS ROHS3 Compliant
- Standard Package 2500