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CSD17581Q3A TI Power MOSFET

The CSD17581Q3A is a 30-V N-channel NexFET™ power MOSFET housed in a 3.3-mm × 3.3-mm SON (Q3A) package, designed for low-loss power conversion . It features an ultra-low on-resistance (RDS(on)) of 3.2 mΩ typical at VGS = 10 V and 3.9 mΩ at VGS = 4.5 V, with a low gate charge (Qg) of 20 nC . The device supports continuous drain current up to 21 A (Tc = 25°C) and has an avalanche rating of 76 mJ . The CSD17581Q3A is optimized for synchronous buck converters and power management applications . Applications include point-of-load (POL) converters for servers, networking equipment, DC-DC converters, motor drive control, and battery protection circuits requiring high efficiency . In stock at HL Electronics – request a quote for fast delivery.

CSD17581Q3A - TI - main product image
Part No.:CSD17581Q3A
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.47
100+ $ 0.36
1250+ $ 0.31
2500+ $ 0.30
37500+ $ 0.30
50000+ $ 0.29

Technical Specifications

  • Part No.CSD17581Q3A
  • Model CSD17581Q3A
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Manufacturer Texas Instruments
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30 V
  • Current - Continuous Drain (Id) @ 25°C 16 A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
  • Rds On (Max) @ Id, Vgs 4.7 mOhm @ 16 A, 4.5 V
  • Vgs(th) (Max) @ Id 1.7 V @ 250 µA
  • Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 15 V
  • Power Dissipation (Max) 2.7 W (Ta)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-VSON (3.3x3.3)
  • Base Product Number CSD17581
  • RoHS ROHS3 Compliant
  • Standard Package 2500
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