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CSD18511KCS TI Power MOSFET

The CSD18511KCS is a NexFET™ N-channel power MOSFET with 40-V drain-to-source voltage (VDS) and ultra-low on-resistance of 6.9 mΩ typical at 10 V VGS . It is housed in a 3-pin TO-220 (KCS) package with a 175°C maximum junction temperature. The device features low gate charge of 23 nC typical and low thermal resistance for efficient heat dissipation . RDS(on) is specified at 25°C and 125°C for safe operating area. Selection is optimal for synchronous buck converter low-side or high-side switching requiring high efficiency and through-hole mounting. Applications include point-of-load converters for servers, DC-DC converters, battery protection circuits, and motor drive inverters requiring 40-V rating and low on-resistance. In stock at HL Electronics – request a quote for fast delivery.

CSD18511KCS - TI - main product image
Part No.:CSD18511KCS
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.94
100+ $ 0.75
1000+ $ 0.72
15000+ $ 0.72
30000+ $ 0.72

Technical Specifications

  • Part No.CSD18511KCS
  • Model CSD18511KCS
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Manufacturer Texas Instruments
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 60 V
  • Current - Continuous Drain (Id) @ 25°C 68 A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
  • Rds On (Max) @ Id, Vgs 6 mOhm @ 22 A, 10 V
  • Vgs(th) (Max) @ Id 2.3 V @ 250 µA
  • Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 30 V
  • Power Dissipation (Max) 3.2 W (Ta), 92 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220-3
  • Base Product Number CSD18511
  • RoHS ROHS3 Compliant
  • Standard Package 50
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