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CSD18514Q5A TI Power MOSFET

The CSD18514Q5A is a NexFET™ N-channel power MOSFET with 40V drain-to-source voltage (VDS) and ultra-low on-resistance of 5.1mΩ typical at 10V VGS. It is housed in a 5mm × 6mm SON (Q5A) package with optimized gate charge for high-frequency switching. The device features low thermal resistance for efficient heat dissipation and is Pb-free, halogen-free, and RoHS compliant. Selection is optimal for synchronous buck converter low-side or high-side switching requiring high efficiency. Applications include point-of-load converters for servers, DC-DC converters, battery protection circuits, and motor drive inverters requiring 40V rating and ultra-low on-resistance. In stock at HL Electronics – request a quote for fast delivery.

CSD18514Q5A - TI - main product image
Part No.:CSD18514Q5A
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.41
100+ $ 0.31
1250+ $ 0.27
2500+ $ 0.26
37500+ $ 0.26
50000+ $ 0.25

Technical Specifications

  • Part No.CSD18514Q5A
  • Model CSD18514Q5A
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Manufacturer Texas Instruments
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 40 V
  • Current - Continuous Drain (Id) @ 25°C 100 A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
  • Rds On (Max) @ Id, Vgs 1.4 mOhm @ 25 A, 10 V
  • Vgs(th) (Max) @ Id 2.3 V @ 250 µA
  • Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 20 V
  • Power Dissipation (Max) 3.1 W (Ta), 106 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-VSON-CLIP (5x6)
  • Base Product Number CSD18514
  • RoHS ROHS3 Compliant
  • Standard Package 2500
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