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CSD18540Q5B TI Power MOSFET
The CSD18540Q5B is a NexFET™ N-channel power MOSFET with 40-V drain-to-source voltage (VDS) and ultra-low on-resistance of 2.5 mΩ typical at 10 V VGS. It is housed in a 5 mm × 6 mm SON (Q5B) package with an optimised gate charge for high-frequency switching (72 nC typical). The device features low thermal resistance (1.2 °C/W) for efficient heat dissipation and is Pb-free, halogen-free, and RoHS compliant. RDS(on) is specified at both 25 °C and 125 °C for a safe operating area. Selection is optimal for synchronous buck converter low-side or high-side switching requiring ultra-low conduction losses. Applications include point-of-load converters for servers, DC-DC converters, battery protection circuits for power tools, and high-current load switching requiring a 40-V rating and ultra-low on-resistance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.18 |
| 100+ | $ 1.02 |
| 1250+ | $ 0.97 |
| 2500+ | $ 0.94 |
Technical Specifications
- Part No.CSD18540Q5B
- Model CSD18540Q5B
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40 V
- Current - Continuous Drain (Id) @ 25°C 200 A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
- Rds On (Max) @ Id, Vgs 1.1 mOhm @ 25 A, 10 V
- Vgs(th) (Max) @ Id 1.9 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 20 V
- Power Dissipation (Max) 3.2 W (Ta), 139 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON-CLIP (5x6)
- Base Product Number CSD18540
- RoHS ROHS3 Compliant
- Standard Package 2500