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CSD18563Q5A TI Power MOSFET
The CSD18563Q5A is a NexFET™ N-channel power MOSFET with 60V drain-to-source voltage (VDS) and ultra-low on-resistance of 8.5mΩ typical at 10V VGS. It is housed in a 5mm × 6mm SON (Q5A) package with optimized gate charge for high-frequency switching. The device features low thermal resistance of 1.4°C/W for efficient heat dissipation. Selection is optimal for synchronous buck converter low-side or high-side switching requiring high efficiency and low conduction losses. Applications include point-of-load converters for servers, networking equipment, DC-DC converters, and battery protection circuits requiring 60V rating and low on-resistance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.75 |
| 100+ | $ 0.62 |
| 1250+ | $ 0.57 |
| 2500+ | $ 0.54 |
Technical Specifications
- Part No.CSD18563Q5A
- Model CSD18563Q5A
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) @ 25°C 100 A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V
- Rds On (Max) @ Id, Vgs 2.1 mOhm @ 20 A, 10 V
- Vgs(th) (Max) @ Id 2.3 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 30 V
- Power Dissipation (Max) 3.1 W (Ta), 171 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON-CLIP (5x6)
- Base Product Number CSD18563
- RoHS ROHS3 Compliant
- Standard Package 2500