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CSD19531Q5A TI Power MOSFET

The CSD19531Q5A is a NexFET power MOSFET from Texas Instruments, featuring N-channel enhancement mode technology. It is designed for high-efficiency power management applications and offers an ultra-low RDS(on) of 5.3 mΩ typical at VGS = 10V. The device supports a drain-to-source voltage (VDS) of 100V and a continuous drain current of 100A. It features low gate charge (Qg) and gate-drain charge (Qgd) for reduced switching losses. Housed in a 8-pin VSONP package (5mm x 6mm) , it is characterized for operation up to 150°C junction temperature. Applications include primary-side telecom applications, secondary-side synchronous rectifiers, motor control, and power supply systems. In stock at HL Electronics – request a quote for fast delivery.

CSD19531Q5A - TI - main product image
Part No.:CSD19531Q5A
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.93
100+ $ 0.77
1250+ $ 0.70
2500+ $ 0.67
37500+ $ 0.67
50000+ $ 0.66

Technical Specifications

  • Part No.CSD19531Q5A
  • Model CSD19531Q5A
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs
  • Manufacturer Texas Instruments
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Current - Continuous Drain (Id) @ 25°C 100 A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Rds On (Max) @ Id, Vgs 4.1mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id 3.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 50 V
  • Power Dissipation (Max) 3.2W (Ta), 195W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-VSON-CLIP (5x6)
  • Base Product Number CSD19531
  • RoHS ROHS3 Compliant
  • Standard Package 2500
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