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CSD19532Q5B TI Power MOSFET
The CSD19532Q5B is a 100-V N-channel NexFET™ power MOSFET housed in a 5mm × 6mm SON (Q5B) package, designed for low-loss power conversion. It features an ultra-low on-resistance (RDS(on)) of 4.9 mΩ typical at 10V VGS, with a low gate charge (Qg) of 33 nC. It is ideal for synchronous buck converters, DC-DC converters, and battery protection circuits. In stock at HL Electronics – request a quote for fast delivery.
Part No.:CSD19532Q5B
Brand:TI
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.00 |
| 100+ | $ 0.86 |
| 1250+ | $ 0.82 |
| 2500+ | $ 0.79 |
Technical Specifications
- Part No.CSD19532Q5B
- Model CSD19532Q5B
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Current - Continuous Drain (Id) @ 25°C 100 A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6 V, 10 V
- Rds On (Max) @ Id, Vgs 4.5 mOhm @ 17 A, 10 V
- Vgs(th) (Max) @ Id 3.2 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4670 pF @ 50 V
- Power Dissipation (Max) 3.2 W (Ta), 208 W (Tc)
- Operating Temperature -55°C ~ 150°C
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON-CLIP (5x6)
- Base Product Number CSD19532
- RoHS ROHS3 Compliant
- Standard Package 2500