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CSD19533Q5A TI Power MOSFET
The CSD19533Q5A is a NexFET™ power MOSFET from Texas Instruments in 8-pin SON (Q5A) package (5mm × 6mm), featuring 100V drain-source voltage and ultra-low on-resistance. For selection, verify drain-source voltage of 100V, RDS(on) of 13.2mΩ typical at VGS=10V, gate charge of 27nC, low Qgd/Qgs ratio for reduced switching losses, and operating temperature from -55°C to +150°C. Features include ultra-low gate charge for simplified drive requirements, high avalanche rating, and excellent thermal performance. Ideal for load switching, battery management, DC-DC converters, power distribution, motor control (BLDC, PMSM), and any low-voltage high-current switching application requiring ultra-low conduction losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.64 |
| 100+ | $ 0.53 |
| 1250+ | $ 0.49 |
| 2500+ | $ 0.47 |
Technical Specifications
- Part No.CSD19533Q5A
- Model CSD19533Q5A
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Texas Instruments
- Series NexFET™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Current - Continuous Drain (Id) 100 A (Ta)
- Rds On (Typ) @ Id, Vgs 5 mΩ @ 10 V
- Vgs(th) (Max) @ Id 2.6 V @ 250 µA
- Gate Charge (Qg) (Typ) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Typ) @ Vds 3100 pF @ 50 V
- Power Dissipation (Max) 3.1 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON (5x6)
- Base Product Number CSD19533Q5A
- RoHS ROHS3 Compliant
- Standard Package 2500