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CSD25402Q3A TI Power MOSFET
The CSD25402Q3A is a NexFET™ P-channel power MOSFET with -20 V drain-to-source voltage (VDS) and low on-resistance of 26.5 mΩ typical at -4.5 V VGS. It is housed in a 3.3 mm × 3.3 mm SON (Q3A) package with optimized gate charge for high-frequency switching. The device features low thermal resistance for efficient heat dissipation and is Pb-free, halogen-free, and RoHS compliant. Selection is optimal for power supply reverse polarity protection and battery disconnect switching applications requiring low-loss power switching with P-channel MOSFET for simplified gate drive. Applications include battery load switching, reverse protection circuits, power muxing for battery-powered devices, load disconnect switches, and power path management requiring low on-resistance and low gate drive voltage. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.36 |
| 100+ | $ 0.27 |
| 1250+ | $ 0.24 |
| 2500+ | $ 0.23 |
Technical Specifications
- Part No.CSD25402Q3A
- Model CSD25402Q3A
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Manufacturer Texas Instruments
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20 V
- Current - Continuous Drain (Id) @ 25°C 25 A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V
- Rds On (Max) @ Id, Vgs 10.5 mOhm @ 8 A, 4.5 V
- Vgs(th) (Max) @ Id 1.2 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1970 pF @ 10 V
- Power Dissipation (Max) 2.8 W (Ta), 65 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-VSON (3.3x3.3)
- Base Product Number CSD25402
- RoHS ROHS3 Compliant
- Standard Package 2500