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DMN1019UFDE-7 DIODES Power MOSFET
The DMN1019UFDE-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage power management. For selection, its ultra-low RDS(on) of just 10mΩ at 4.5V minimizes conduction losses, while an 800mV maximum threshold voltage enables direct drive from 1.2V logic and single-cell batteries. The 11A drain current rating and 12V breakdown voltage suit compact, high-efficiency designs. Its low gate charge (50.6nC) reduces switching losses in high-frequency operation. In application, it excels as a load switch in smartphones, tablets, and portable media players. Its low on-resistance also makes it ideal for battery protection circuits, DC-DC converter low-side switches, and motor control in IoT devices and wearables. The tiny U-DFN2020-6 package saves critical board space in space-constrained applications like wireless earbuds and smart sensors. In stock at HL Electronics – request a quote for fast delivery.
Partno：DMN1019UFDE-7Encapsulation：
Brand：DIODESParticular Year：
Classification：Packing：
Stock：32560SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoDMN1019UFDE-7
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 12V
- Current - Continuous Drain (Id) @ 25°C 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Vgs(th) (Max) @ Id 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds 2425pF @ 10V
- Vgs (Max) ±8V
- FET Feature -
- Power Dissipation (Max) 690mW (Ta)
- Rds On (Max) @ Id, Vgs 10 mOhm @ 9.7A, 4.5V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package U-DFN2020-6 (Type E)