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DMN10H099SK3-13 DIODES Power MOSFET
Partno：DMN10H099SK3-13Encapsulation：
Brand：DIODESParticular Year：
Classification：Packing：
Stock：7091SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.284112
Total：
$ 0.28
Other Platform Purchase Links： No Data
- PartNoDMN10H099SK3-13
- Categories Discrete Semiconductor Products
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25u00b0C 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 3V @ 250u00b5A
- Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 50V
- Vgs (Max) u00b120V
- FET Feature -
- Power Dissipation (Max) 34W (Tc)
- Rds On (Max) @ Id, Vgs 80 mOhm @ 3.3A, 10V
- Operating Temperature -55u00b0C ~ 150u00b0C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package TO-252