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DMN2011UTS-13 DIODES Power MOSFET

DMN2011UTS-13 - DIODES - main product image
Part No.:DMN2011UTS-13
Brand:DIODES
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.20
100+ $ 0.15
1250+ $ 0.13
2500+ $ 0.12

Technical Specifications

  • Part No.DMN2011UTS-13
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series -
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 20V
  • Current - Continuous Drain (Id) @ 25u00b0C 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
  • Vgs(th) (Max) @ Id 1V @ 250u00b5A
  • Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 2248pF @ 10V
  • Vgs (Max) u00b112V
  • FET Feature -
  • Power Dissipation (Max) 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs 11 mOhm @ 7A, 4.5V
  • Operating Temperature -55u00b0C ~ 150u00b0C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-TSSOP
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