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DMN2014LHAB-7 DIODES Power MOSFET
Partno：DMN2014LHAB-7Encapsulation：
Brand：DIODESParticular Year：
Classification：Packing：
Stock：5884SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.144474
Total：
$ 0.14
Other Platform Purchase Links： No Data
- PartNoDMN2014LHAB-7
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type 2 N-Channel (Dual)
- FET Feature Logic Level Gate
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 9A
- Rds On (Max) @ Id, Vgs 13 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
- Power - Max 800mW
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package U-DFN2030-6 (Type B)