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DMN2024UFX-7 DIODES Power MOSFET
The DMN2024UFX-7 is a dual N-channel enhancement mode Power MOSFET from Diodes Incorporated in V-DFN2050-4 surface-mount package, featuring 20V drain-source voltage and 8A continuous drain current per channel . For selection, verify maximum RDS(on) of 22mΩ at 4.5V gate drive, gate charge of 14.8nC at 10V, input capacitance of 647pF at 10V, power dissipation of 920mW, and operating junction temperature from -55°C to +150°C. Features include standard FET feature, low threshold voltage for logic-level gate drive, fast switching speed, 100% avalanche tested for ruggedness. Ideal for load switching and power path management in portable electronics, DC-DC converters, battery protection circuits, and any 20V switching application requiring dual N-channel MOSFETs in compact DFN package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.23 |
| 100+ | $ 0.18 |
| 750+ | $ 0.16 |
| 1500+ | $ 0.16 |
| 3000+ | $ 0.15 |
| 18000+ | $ 0.15 |
| 39000+ | $ 0.15 |
Technical Specifications
- Part No.DMN2024UFX-7
- Model DMN2024UFX-7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type 2 N-Channel (Dual)
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20 V
- Current - Continuous Drain (Id) 8 A (Tc)
- Rds On (Max) @ Id, Vgs 22 mΩ @ 4 A, 4.5 V
- Vgs(th) (Max) @ Id 1 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 647 pF @ 10 V
- Power Dissipation (Max) 920 mW (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package V-DFN2050-4
- Base Product Number DMN2024UFX
- RoHS ROHS3 Compliant
- Standard Package 3000