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DMN2024UTS-13 DIODES Power MOSFET
The DMN2024UTS-13 is a dual N-channel enhancement mode Power MOSFET from Diodes Incorporated in 8-TSSOP (0.173", 4.40mm width) surface-mount package, featuring 20V drain-source voltage and 6.2A continuous drain current (15.2A at case temperature) . For selection, verify maximum RDS(on) of 24mΩ at 4.5V gate drive, gate charge of 0.9nC at 10V, input capacitance of 647pF at 10V, power dissipation of 890mW, Vgs(th) of 950mV at 250µA, and operating temperature from -55°C to +150°C . Features include logic-level gate drive for direct microcontroller interface, fast switching speed, 100% avalanche tested for ruggedness, and dual N-channel configuration in space-saving TSSOP-8 package. Ideal for load switching and power path management, DC-DC converters, battery protection circuits, portable electronics, and any low-voltage switching application requiring dual N-channel MOSFETs in compact TSSOP-8 package . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.16 |
| 1250+ | $ 0.14 |
| 2500+ | $ 0.13 |
| 37500+ | $ 0.13 |
| 50000+ | $ 0.13 |
Technical Specifications
- Part No.DMN2024UTS-13
- Model DMN2024UTS-13
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type 2 N-Channel (Dual)
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20 V
- Current - Continuous Drain (Id) 6.2 A (Ta)
- Rds On (Max) @ Id, Vgs 24 mΩ @ 6.5 A, 4.5 V
- Vgs(th) (Max) @ Id 950 mV @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 647 pF @ 10 V
- Power Dissipation (Max) 890 mW (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-TSSOP
- Base Product Number DMN2024UTS
- RoHS ROHS3 Compliant
- Standard Package 2500