DMN2027USS-13 DIODES Power MOSFET

The DMN2027USS-13 is a dual N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring low drain-source voltage and low on-resistance for high-efficiency low-voltage switching applications. For selection, verify drain-source voltage rating, continuous drain current per channel, on-resistance for conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, and operating junction temperature suitable for power applications. Features include low threshold voltage for direct drive from low-voltage logic, fast switching speed, 100% avalanche tested for ruggedness, and dual configuration in compact surface-mount package. Ideal for load switching and power path management, DC-DC converters, battery protection circuits, portable electronics, and any low-voltage switching application requiring dual N-channel MOSFETs in space-constrained designs . In stock at HL Electronics – request a quote for fast delivery.