> Goods Details Page
> DMN2300UFL4Q-7
DMN2300UFL4Q-7 DIODES Power MOSFET
The DMN2300UFL4Q-7 is an automotive-grade (AEC-Q101) dual N-channel enhancement mode Power MOSFET from Diodes Incorporated in X2-DFN1310-6 ultra-compact package, featuring 20V drain-source voltage and 2.11A continuous drain current per channel . For selection, verify maximum RDS(on) of 195mΩ at 4.5V gate drive, gate threshold voltage of 950mV at 250µA, gate charge of 3.2nC at 4.5V, input capacitance of 135.2pF at 0V, power dissipation of 530mW, and operating temperature from -55°C to +150°C. Features include AEC-Q101 qualification for automotive reliability, low threshold voltage for logic-level gate drive, fast switching speed, and ultra-compact X2-DFN1310-6 package. Ideal for automotive body electronics, load switching in space-constrained designs, portable electronics, and any 20V switching application requiring automotive-grade dual N-channel MOSFETs. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.16 |
| 750+ | $ 0.14 |
| 1500+ | $ 0.12 |
| 3000+ | $ 0.11 |
| 18000+ | $ 0.11 |
| 39000+ | $ 0.11 |
Technical Specifications
- Part No.DMN2300UFL4Q-7
- Model DMN2300UFL4Q-7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type 2 N-Channel (Dual)
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20 V
- Current - Continuous Drain (Id) 2.11 A (Ta)
- Rds On (Max) @ Id, Vgs 195 mΩ @ 300 mA, 4.5 V
- Vgs(th) (Max) @ Id 0.95 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 3.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 135.2 pF @ 0 V
- Power Dissipation (Max) 530 mW (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package X2-DFN1310-6
- Base Product Number DMN2300UFL4Q
- RoHS ROHS3 Compliant
- Standard Package 3000