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DMN24H11DS-7 DIODES Power MOSFET
The DMN24H11DS-7 is an N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring 240V drain-source voltage and low on-resistance for high-voltage switching applications. For selection, verify drain-source voltage of 240V, continuous drain current, on-resistance for conduction losses, gate charge for switching performance, logic-level gate drive compatibility, 100% avalanche tested for ruggedness, and operating junction temperature suitable for power applications. Features include STripFET technology for low on-resistance, fast switching speed, and surface-mount SOT-23 package for automated assembly. Ideal for high-voltage switching applications including offline power supplies, LED lighting drivers, DC-DC converters, load switching, and any 240V switching application requiring N-channel MOSFET with logic-level gate drive. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.14 |
| 200+ | $ 0.11 |
| 1500+ | $ 0.09 |
| 3000+ | $ 0.09 |
| 45000+ | $ 0.09 |
| 60000+ | $ 0.09 |
Technical Specifications
- Part No.DMN24H11DS-7
- Model DMN24H11DS-7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 240 V
- Current - Continuous Drain (Id) 0.23 A (Ta)
- Rds On (Typ) @ Id, Vgs 11 Ω @ 10 V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Features ESD Protected Gate
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3
- Base Product Number DMN24H11
- RoHS ROHS3 Compliant
- Standard Package 3000