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DMN24H3D5L-7 DIODES Power MOSFET
The DMN24H3D5L-7 is an N-channel enhancement mode Power MOSFET from Diodes Incorporated in SOT-23 surface-mount package, featuring 240V drain-source voltage and 0.48A continuous drain current . For selection, verify maximum RDS(on) of 3.5Ω at VGS=10V, gate charge of 6.6nC for low switching losses, input capacitance of 188pF at 25V, output capacitance of 65pF, power dissipation of 0.76W, and operating junction temperature from -55°C to +150°C . Features include logic-level gate drive for direct microcontroller interface, fast switching speed, and 100% avalanche tested for ruggedness. Ideal for high-voltage switching applications including offline power supplies, LED lighting drivers, relay drivers, and any 240V low-power switching requiring N-channel MOSFET with logic-level gate drive in compact SOT-23 package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.16 |
| 750+ | $ 0.15 |
| 1500+ | $ 0.14 |
| 3000+ | $ 0.13 |
Technical Specifications
- Part No.DMN24H3D5L-7
- Model DMN24H3D5L-7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 240 V
- Current - Continuous Drain (Id) 0.48 A (Ta)
- Rds On (Max) @ Id, Vgs 3.5 Ω @ 10 V
- Gate Charge (Qg) (Typ) @ Vgs 6.6 nC
- Input Capacitance (Ciss) (Max) @ Vds 188 pF @ 25 V
- Reverse Transfer Capacitance (Crss) 8 pF @ 25 V
- Power Dissipation (Max) 0.76 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3
- Base Product Number DMN24H3D5L
- RoHS ROHS3 Compliant
- Standard Package 3000