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DMN4035LQ-13 DIODES Power MOSFET
The DMN4035LQ-13 is a 40V N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring low on-resistance and logic-level gate drive for high-efficiency switching in automotive applications. For selection, verify drain-source voltage of 40V, continuous drain current, on-resistance for low conduction losses, logic-level gate drive compatible with 3.3V/5V microcontrollers, low gate charge for minimized switching losses, AEC-Q101 automotive qualification, and operating junction temperature from -55°C to +150°C. Features include STripFET technology for low on-resistance, 100% avalanche tested for ruggedness, and surface-mount SOT-23-6 (TSOT-26) package for automated assembly. Ideal for load switching and power path management in automotive body electronics, battery management systems, DC-DC converters, motor control (DC motors, pumps), and any 40V switching application requiring automotive-grade reliability. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.16 |
| 100+ | $ 0.13 |
| 500+ | $ 0.12 |
| 2500+ | $ 0.11 |
| 5000+ | $ 0.10 |
| 10000+ | $ 0.10 |
| 60000+ | $ 0.10 |
Technical Specifications
- Part No.DMN4035LQ-13
- Model DMN4035LQ-13
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40 V
- Current - Continuous Drain (Id) 3.6 A (Ta)
- Rds On (Typ) @ Id, Vgs 0.05 Ω @ 10 V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Features Logic Level Gate
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3
- Base Product Number DMN4035L
- RoHS ROHS3 Compliant
- Standard Package 10000