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DMN6066SSDQ-13 DIODES Power MOSFET
The DMN6066SSDQ-13 is a dual N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring 60V drain-source voltage and low on-resistance for high-efficiency switching applications. For selection, verify drain-source voltage rating, continuous drain current per channel, on-resistance for conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, and operating junction temperature suitable for power applications. Features include low threshold voltage for direct drive from low-voltage logic, fast switching speed, 100% avalanche tested for ruggedness, and dual configuration in compact surface-mount package. Ideal for load switching and power path management, DC-DC converters, battery protection circuits, portable electronics, and any 60V switching application requiring dual N-channel MOSFETs in space-constrained designs. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.63 |
| 100+ | $ 0.52 |
| 1250+ | $ 0.47 |
| 2500+ | $ 0.45 |
| 37500+ | $ 0.45 |
| 50000+ | $ 0.45 |
Technical Specifications
- Part No.DMN6066SSDQ-13
- Model DMN6066SSDQ-13
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 5 A (Ta)
- Rds On (Max) @ Id, Vgs 0.045 Ω @ 4 A, 10 V
- Power Dissipation (Max) 1.2 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SO-8
- Base Product Number DMN6066SSD
- RoHS ROHS3 Compliant
- Standard Package 2500