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DMP45H21DHE-13 DIODES Power MOSFET
The DMP45H21DHE-13 is a P-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring -45V drain-source voltage and low on-resistance for high-efficiency switching applications. For selection, verify drain-source voltage rating, continuous drain current, on-resistance for conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature suitable for power applications. Features include low threshold voltage for direct drive from low-voltage logic, fast switching speed, and compact surface-mount package for space-constrained designs. Ideal for high-side load switching and power path management, battery protection circuits, low-voltage DC-DC converters, power management in portable electronics, and any P-channel switching application requiring logic-level gate drive with 45V rating. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.28 |
| 100+ | $ 0.21 |
| 1250+ | $ 0.18 |
| 2500+ | $ 0.17 |
| 37500+ | $ 0.17 |
| 50000+ | $ 0.17 |
Technical Specifications
- Part No.DMP45H21DHE-13
- Model DMP45H21DHE-13
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 450 V
- Current - Continuous Drain (Id) 0.36 A (Ta)
- Rds On (Max) @ Id, Vgs 21 Ω @ 10 V
- Vgs(th) (Max) @ Id 4 V @ 250 µA
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
- Power Dissipation (Max) 1.3 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3
- Base Product Number DMP45H21
- RoHS ROHS3 Compliant
- Standard Package 3000