DMT10H009LCG-7 DIODES Power MOSFET
The DMT10H009LCG-7 is a 100V N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring ultra-low on-resistance for high-efficiency switching applications requiring high voltage and high current. For selection, verify drain-source voltage of 100V, continuous drain current for high-current capability, on-resistance for extremely low conduction losses, gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature suitable for power applications. Features include STripFET technology for industry-leading low on-resistance, fast switching speed, low gate charge for reduced drive requirements, and compact surface-mount package for space-constrained designs. Ideal for high-efficiency switching applications including synchronous rectification in isolated DC-DC converters for telecom and server PSUs, battery management systems (BMS) for high-current Li-Ion batteries, load switching for power distribution, motor control for BLDC motors, and any 100V high-current power conversion requiring extremely low conduction losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.57 |
| 100+ | $ 0.47 |
| 1000+ | $ 0.43 |
| 2000+ | $ 0.41 |
| 30000+ | $ 0.41 |
| 40000+ | $ 0.40 |
Technical Specifications
- Part No.DMT10H009LCG-7
- Model DMT10H009LCG-7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Current - Continuous Drain (Id) 12 A (Ta)
- Rds On (Typ) @ Id, Vgs 0.009 Ω @ 10 V
- Vgs(th) (Max) @ Id 2.5 V @ 250 µA
- Power Dissipation (Max) 1.5 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerDI5060-8
- Base Product Number DMT10H009
- RoHS ROHS3 Compliant
- Standard Package 3000
