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DMT10H010LSS-13 DIODES Power MOSFET

DMT10H010LSS-13 - DIODES - main product image
Part No.:DMT10H010LSS-13
Brand:DIODES
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.52
100+ $ 0.43
1250+ $ 0.39
2500+ $ 0.38

Technical Specifications

  • Part No.DMT10H010LSS-13
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 11.5A (Ta), 29.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs 9.5 mOhm @ 13A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-SO
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