DMT6015LFVW-7 DIODES Power MOSFET
The DMT6015LFVW-7 is an N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring 60V drain-source voltage and low on-resistance for high-efficiency switching applications. For selection, verify drain-source voltage rating, continuous drain current, on-resistance for conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature suitable for power applications. Features include low threshold voltage for direct drive from low-voltage logic, fast switching speed, and compact surface-mount package for space-constrained designs. Ideal for synchronous rectification in isolated DC-DC converters, battery management systems (BMS), load switching for power distribution, motor control, and any 60V switching application requiring low conduction losses with logic-level gate drive . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.20 |
| 50+ | $ 0.15 |
| 2000+ | $ 0.14 |
| 40000+ | $ 0.14 |
| 60000+ | $ 0.14 |
Technical Specifications
- Part No.DMT6015LFVW-7
- Model DMT6015LFVW-7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 7.3 A (Ta)
- Rds On (Typ) @ Id, Vgs 0.015 Ω @ 10 V
- Power Dissipation (Max) 1.2 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerDI3333-8
- Base Product Number DMT6015LFVW
- RoHS ROHS3 Compliant
- Standard Package 3000
