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DMTH10H017LPDQ-13 DIODES Power MOSFET
The DMTH10H017LPDQ-13 is an automotive-grade (AEC-Q101) N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring 100V drain-source voltage and ultra-low on-resistance for high-efficiency switching in automotive applications. For selection, verify drain-source voltage of 100V, continuous drain current for high-current capability, on-resistance for extremely low conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, AEC-Q101 qualification, and operating temperature from -55°C to +150°C. Features include STripFET technology for low on-resistance, fast switching speed, PPAP capability, and compact surface-mount package. Ideal for automotive body electronics, load switching in 12V/24V systems, battery management systems, DC-DC converters, motor control (DC motors, pumps), and any 100V switching application requiring automotive-grade reliability. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.89 |
| 100+ | $ 0.75 |
| 1250+ | $ 0.68 |
| 2500+ | $ 0.65 |
| 37500+ | $ 0.65 |
| 50000+ | $ 0.64 |
Technical Specifications
- Part No.DMTH10H017LPDQ-13
- Model DMTH10H017LPDQ-13
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Current - Continuous Drain (Id) 9.2 A (Ta)
- Rds On (Typ) @ Id, Vgs 0.017 Ω @ 10 V
- Vgs(th) (Max) @ Id 3 V @ 250 µA
- Power Dissipation (Max) 2.3 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerDI5060-8
- Base Product Number DMTH10H017LPDQ
- RoHS ROHS3 Compliant
- Standard Package 3000