DMTH8003SPS-13 DIODES Power MOSFET
The DMTH8003SPS-13 is an N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring 80V drain-source voltage and low on-resistance for high-efficiency switching applications. For selection, verify drain-source voltage rating, continuous drain current, on-resistance for conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature suitable for power applications. Features include low threshold voltage for direct drive from low-voltage logic, fast switching speed, and compact surface-mount package for space-constrained designs. Ideal for synchronous rectification in isolated DC-DC converters, battery management systems, load switching for power distribution, motor control, and any 80V switching application requiring low conduction losses with logic-level gate drive. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.54 |
| 100+ | $ 0.45 |
| 1250+ | $ 0.41 |
| 2500+ | $ 0.39 |
Technical Specifications
- Part No.DMTH8003SPS-13
- Model DMTH8003SPS-13
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80 V
- Current - Continuous Drain (Id) 10.2 A (Ta)
- Rds On (Typ) @ Id, Vgs 0.003 Ω @ 10 V
- Power Dissipation (Max) 2.2 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerDI5060-8
- Base Product Number DMTH8003
- RoHS ROHS3 Compliant
- Standard Package 3000
