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DXT5551P5-13 DIODES Transistors - Bipolar (BJT) - Single

Select the DXT5551P5-13 NPN BJT when you need a high-voltage, general-purpose transistor in a small footprint. Verify your collector-emitter voltage does not exceed 160V and collector current stays within 600mA. Its key selection criteria include a 130MHz transition frequency for medium-speed switching and a low 200mV saturation voltage at 50mA, which minimizes power loss. Typical applications include high-voltage inverter drives, power supply startup circuits, telecom line cards, and LED lighting ballasts. It also serves excellently as a high-voltage buffer or level shifter for driving relays and solenoids in industrial control panels. The PowerDI™ 5 surface-mount package combines a space-saving design with 2.25W power dissipation, suiting densely packed, thermally-demanding designs across its -55°C to 150°C operating range. In stock at HL Electronics – request a quote for fast delivery.

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Partno：DXT5551P5-13Encapsulation：

Brand：DIODESParticular Year：

Classification：Packing：

Stock：36165SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.205528
Total： $ 0.21
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  • PartNoDXT5551P5-13
  • Category Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Transistor Type NPN
  • Current - Collector (Ic) (Max) 600mA
  • Voltage - Collector Emitter Breakdown (Max) 160V
  • Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max) 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
  • Power - Max 2.25W
  • Frequency - Transition 130MHz
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package PowerDI™ 5
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