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DXTN5820DFDB-7 DIODES Bipolar (BJT)
The DXTN5820DFDB-7 is an NPN small signal bipolar power transistor from Diodes Incorporated, featuring 20V collector-emitter voltage, 6A continuous collector current, and 80MHz transition frequency for switching applications . For selection, verify collector-base capacitance of 95pF, VCEsat maximum of 0.275V for low conduction losses, DC current gain (hFE) minimum of 80, power dissipation of 1.25W, and operating temperature from -55°C to +150°C. Features include single-element configuration, surface mount package with NO LEAD terminals, silver/nickel/palladium/gold terminal finish, and RoHS compliance. Ideal for automotive applications (transportation and logistics), switching power supplies, relay and solenoid drivers, DC-DC converters, and any 20V low-voltage high-current switching requiring NPN transistor with high fT of 80MHz. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.16 |
| 750+ | $ 0.13 |
| 1500+ | $ 0.12 |
| 3000+ | $ 0.11 |
Technical Specifications
- Part No.DXTN5820DFDB-7
- Model DXTN5820DFDB-7
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 6 A
- Voltage - Collector Emitter Breakdown (Max) 20 V
- Vce Saturation (Max) @ Ib, Ic 275 mV
- Current - Collector Cutoff (Max) 100 nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 300
- Power - Max 1.25 W
- Frequency - Transition 80 MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package UDFN2020-3
- Base Product Number DXTN5820DFDB
- RoHS ROHS3 Compliant
- Standard Package 3000