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FMMT413TD DIODES Bipolar (BJT)
The FMMT413TD is an NPN bipolar transistor from Diodes Incorporated, featuring high current capability and low saturation voltage for switching applications. For selection, verify collector-emitter voltage rating, continuous collector current, VCEsat for low conduction losses, DC current gain (hFE) characteristics, transition frequency for switching speed, and operating junction temperature suitable for power applications. Features include low saturation voltage for high efficiency, fast switching speed, and surface-mount package for automated assembly. Ideal for relay and solenoid drivers, DC-DC converters, switching regulators, power management in industrial equipment, and any switching application requiring NPN transistor with high current capability and low VCEsat. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 2.49 |
| 10+ | $ 2.15 |
| 500+ | $ 2.09 |
Technical Specifications
- Part No.FMMT413TD
- Model FMMT413TD
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 150 mA
- Voltage - Collector Emitter Breakdown (Max) 50 V
- Vce Saturation (Max) @ Ib, Ic 0.15 V @ 1.5 mA, 15 mA
- Current - Collector Cutoff (Max) 100 nA
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1 mA, 5 V
- Power - Max 330 mW
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3
- Base Product Number FMMT413
- RoHS ROHS3 Compliant
- Standard Package 3000