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FMMT458QTA DIODES Bipolar (BJT)
The FMMT458QTA is an NPN bipolar transistor from Diodes Incorporated in SOT-23 surface-mount package, featuring 400V collector-emitter breakdown voltage (Vceo), 225mA continuous collector current, and 50MHz transition frequency . For selection, verify collector-emitter saturation voltage of 200mV max for low conduction losses, DC current gain (hFE) of 100 min, base-emitter breakdown voltage of 7V, collector cutoff current of 100nA, power dissipation of 500mW, and operating junction temperature from -55°C to +150°C . Ideal for high-voltage switching applications in telecommunications, industrial control, offline power supplies, relay drivers, and any 400V low-current switching requiring NPN transistor with fast switching speed and high breakdown voltage in compact SOT-23 package . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.22 |
| 100+ | $ 0.17 |
| 750+ | $ 0.16 |
| 1500+ | $ 0.15 |
| 3000+ | $ 0.14 |
| 18000+ | $ 0.14 |
| 39000+ | $ 0.14 |
Technical Specifications
- Part No.FMMT458QTA
- Model FMMT458QTA
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 225 mA
- Voltage - Collector Emitter Breakdown (Max) 400 V
- Vce Saturation (Max) @ Ib, Ic 200 mV @ 10 mA, 50 mA
- Current - Collector Cutoff (Max) 100 nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50 mA, 10 V
- Power - Max 500 mW
- Frequency - Transition 50 MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3
- Base Product Number FMMT458
- RoHS ROHS3 Compliant
- Standard Package 3000