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FQB34P10TM ON Power MOSFET
Partno：FQB34P10TMEncapsulation：
Brand：ONParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.980791
Total：
$ 0.98
Other Platform Purchase Links： No Data
- PartNoFQB34P10TM
- Categories Discrete Semiconductor Products
- Series QFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 33.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 25V
- Vgs (Max) ±25V
- FET Feature -
- Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
- Rds On (Max) @ Id, Vgs 60 mOhm @ 16.75A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK (TO-263AB)