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FQD19N10LTM ON Power MOSFET
Partno：FQD19N10LTMEncapsulation：
Brand：ONParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.578803
Total：
$ 0.58
Other Platform Purchase Links： No Data
- PartNoFQD19N10LTM
- Categories Discrete Semiconductor Products
- Series QFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 15.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs 100 mOhm @ 7.8A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak