> Goods Details Page
> FZT651QTA
FZT651QTA DIODES Bipolar (BJT)
The FZT651QTA is an NPN bipolar power transistor from Diodes Incorporated, featuring high current capability and low saturation voltage for switching applications. For selection, verify collector-emitter voltage rating, continuous collector current, VCEsat for low conduction losses, DC current gain (hFE) characteristics, transition frequency for switching speed, and operating junction temperature suitable for power applications. Features include low saturation voltage for high efficiency, fast switching speed, and surface-mount SOT-223 package for automated assembly. Ideal for relay and solenoid drivers, DC-DC converters, switching regulators, power management in industrial equipment, and any switching application requiring NPN transistor with high current capability and low VCEsat . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.30 |
| 50+ | $ 0.23 |
| 1000+ | $ 0.21 |
| 20000+ | $ 0.21 |
| 30000+ | $ 0.21 |
Technical Specifications
- Part No.FZT651QTA
- Model FZT651QTA
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer Diodes Incorporated
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 3 A
- Voltage - Collector Emitter Breakdown (Max) 60 V
- Vce Saturation (Max) @ Ib, Ic 300 mV @ 100 mA, 1.5 A
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5 A, 2 V
- Power - Max 2 W
- Frequency - Transition 175 MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number FZT651
- RoHS ROHS3 Compliant
- Standard Package 1000