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FZT658TA DIODES Bipolar (BJT)
The FZT658TA is an NPN bipolar power transistor from Diodes Incorporated in SOT-223 surface-mount package, featuring 400V collector-emitter voltage and high current capability for high-voltage switching applications. For selection, verify collector-emitter saturation voltage for low conduction losses, DC current gain (hFE) characteristics, transition frequency for switching speed, power dissipation with proper PCB copper area, and operating junction temperature suitable for power applications. Features include low saturation voltage for high efficiency, fast switching speed, and surface-mount SOT-223 package for automated assembly. Ideal for high-voltage switching applications including offline power supplies, relay and solenoid drivers, DC-DC converters, and any 400V switching application requiring NPN transistor with high current capability. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.29 |
| 50+ | $ 0.22 |
| 1000+ | $ 0.20 |
Technical Specifications
- Part No.FZT658TA
- Model FZT658TA
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 2 A
- Voltage - Collector Emitter Breakdown (Max) 400 V
- Vce Saturation (Max) @ Ib, Ic 200 mV @ 50 mA, 500 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500 mA, 10 V
- Power - Max 2 W
- Frequency - Transition 50 MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number FZT658
- RoHS ROHS3 Compliant
- Standard Package 1000