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IRF510PBF VISHAY Power MOSFET

The IRF510PBF from Vishay is an N-channel MOSFET providing 100V breakdown and 5.6A drain current in TO‑220AB for fast, cost‑effective switching. For selection, its 540mΩ Rds(on) at 10V, low 8.3nC gate charge, 180pF input capacitance, and 4V threshold ease gate-drive design while 43W dissipation with –55°C to +175°C operation support rugged environments.Typical applications include DC‑DC converters, switching regulators, motor drivers, LED lighting, battery chargers, power supplies, and UPS systems where robust high‑voltage switching is needed. In stock at HL Electronics – request a quote for fast delivery.

IRF510PBF - VISHAY - main product image
Part No.:IRF510PBF
Brand:VISHAY
Date Code:
Stock:41,900
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.37
50+ $ 0.28
1000+ $ 0.26
20000+ $ 0.26
30000+ $ 0.26

Technical Specifications

  • Part No.IRF510PBF
  • Series -
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 540 mOhm @ 3.4A, 10V
  • Power Dissipation (Max) 43W (Tc)
  • Supplier Device Package TO-220AB
  • Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
  • Drain to Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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